Ion Implantation in Diazoquinone–Novolac Photoresist

Graphene synthesis by ion implantation.

We demonstrate an ion implantation method for large-scale synthesis of high quality graphene films with controllable thickness. Thermally annealing polycrystalline nickel substrates that have been ion implanted with carbon atoms results in the surface growth of graphene films whose average thickness is controlled by implantation dose. The graphene film quality, as probed with Raman and electric...

Transport System for Ion Implantation

ITEP in collaboration with MEPHI and HCEI (Tomsk) develops the high intensity ion beam generation and transport systems for low energy (1 – 50 keV) ion implantation. Such facilities are used for semiconductor technology. The Bernas type ion source is used for the ribbon ion beam production. The periodical system of electrostatic lenses (electrostatic undulator) was proposed for ribbon beam tran...

Ionization‐enhanced diffusion: Ion implantation in semiconductors

ion Implantation of boron in germanium

The activation of boron implanted at room temperature into germanium has been studied. In contrast to other group III elements boron forms a p-type layer before any postl.1nplant annealIng steps. Variable temperature Hall effect measurements and deep level trans{ent spectroscopy experiments indicate that all of the boron ions are electricaHy active as shallow acceptor the en.tire dose range (5 ...

Thyratron Modulators in Plasma Source Ion Implantation

Plasma Source Ion Implantation (PSII) is an emerging technology which can be used to harden metal surfaces in a conformal manner. North Star Research Corp. (NSRC) is building a unique implanter system for Empire Hard Chrome which will be the first truly commercial implanter of this type. The choice of pulsed power technology for this application is important from the standpoint of both reliabil...